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18-mbit ddr ii+ sram 2-word burst architecture (2.0 cycle read latency) cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-53198 rev. *e revised january 18, 2010 features 18-mbit density (2m x 8, 2m x 9, 1m x 18, 512k x 36) 450 mhz clock for high bandwidth 2-word burst for reducing address bus frequency double data rate (ddr) interfaces (data transferred at 900 mhz) at 450 mhz available in 2.0 clock cycle latency two input clocks (k and k ) for precise ddr timing ? sram uses rising edges only echo clocks (cq and cq ) simplify data capture in high speed systems data valid pin (qvld) to indicate valid data on the output synchronous internally self timed writes ddr ii+ operates with 2.0 cycle read latency when doff is asserted high operates similar to ddr i device with 1 cycle read latency when doff is asserted low core v dd = 1.8v 0.1v; i/o v ddq = 1.4v to v dd [1] ? supports both 1.5v and 1.8v i/o supply hstl inputs and variable drive hstl output buffers available in 165-ball fbga package (13 x 15 x 1.4 mm) offered in both pb-free and non pb-free packages jtag 1149.1 compatible test access port phase locked loop (pll) for accurate data placement configurations with read cycle latency of 2.0 cycles: cy7c11461kv18 ? 2m x 8 cy7c11571kv18 ? 2m x 9 cy7c11481kv18 ? 1m x 18 cy7c11501kv18 ? 512k x 36 functional description the cy7c11461kv18, cy7c11571kv18, cy7c11481kv18, and cy7c11501kv18 are 1.8v synchronous pipelined srams equipped with ddr ii+ architectu re. the ddr ii+ consists of an sram core with advanced synchronous peripheral circuitry. addresses for read and write are latched on alternate rising edges of the input (k) clock. writ e data is registered on the rising edges of both k and k . read data is driven on the rising edges of k and k . each address location is associated with two 8-bit words (cy7c11461kv18), 9-bit words (cy7c11571kv18), 18-bit words (cy7c11481kv18), or 36-bit words (cy7c11501kv18) that burst seque ntially into or out of the device. asynchronous inputs include an output impedance matching input (zq). synchronous data outputs (q, sharing the same physical pins as the data inputs d) are tightly matched to the two output echo clocks cq/cq , eliminating the need for separately capturing data from each individual ddr sram in the system design. all synchronous inputs pass through input registers controlled by the k or k input clocks. all data outputs pass through output registers controlled by the k or k input clocks. writes are conducted with on-chip synchronous self-timed write circuitry. these devices are down bonded from the 65 nm 72m qdrii+/ddrii+ devices and hence have the same i dd /i sb1 values and jtag id code as the equivalent 72m device options. for details refer to the application note an53189, 65 nm technology interim qdrii+/d drii+ sram device family description. table 1. selection guide description 450 mhz 400 mhz 375 mhz 333 mhz unit maximum operating frequency 450 400 375 333 mhz maximum operating current x8 630 580 550 510 ma x9 630 580 550 510 x18 650 590 570 520 x36 820 750 710 640 [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 2 of 28 note 1. the cypress qdr-ii+ devices surpass the qdr consortium specification and can support v ddq = 1.4v to v dd . logic block diagram (cy7c11461kv18) logic block diagram (cy7c11571kv18) write reg write reg clk a (19:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 8 16 8 nws [1:0] v ref write add. decode 8 20 8 ld control r/w doff 1m x 8 array 1m x 8 array 8 dq [7:0] 8 cq cq qvld write reg write reg clk a (19:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 9 18 9 bws [0] v ref write add. decode 9 20 9 ld control r/w doff 1m x 9 array 1m x 9 array 9 dq [8:0] 9 cq cq qvld [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 3 of 28 logic block diagram (cy7c11481kv18) logic block diagram (cy7c11501kv18) write reg write reg clk a (18:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 18 36 18 bws [1:0] v ref write add. decode 18 19 18 ld control r/w doff 512k x 18 array 512k x 18 array 18 dq [17:0] 18 cq cq qvld write reg write reg clk a (17:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 36 72 36 bws [3:0] v ref write add. decode 36 18 36 ld control r/w doff 256k x 36 array 256k x 36 array 36 dq [35:0] 36 cq cq qvld [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 4 of 28 contents features ............................................................................... 1 configurations ..................................................................... 1 functional description........................................................ 1 logic block diagram (cy7c11461kv18)........................... 2 logic block diagram (cy7c11571kv18)........................... 2 logic block diagram (cy7c11481kv18)........................... 3 logic block diagram (cy7c11501kv18)........................... 3 contents ............................................................................... 4 pin configuration ............................................................... 5 165-ball fbga (13 x 15 x 1.4 mm) pinout .................... 5 functional overview .......................................................... 9 read operations ........................................................... 9 write operations ........................................................... 9 byte write operations ................................................... 9 ddr operation.......... .............. .............. .............. .......... 9 depth expansion ........................................................... 9 programmable impedance ............................................ 9 echo clocks .................................................................. 9 valid data indicator (qvld).... .................................... 10 pll .............................................................................. 10 application example ........................................................ 10 ieee 1149.1 serial bo undary scan (jtag) ............ ........ 13 disabling the jtag feature ........................................ 13 test access port?test clock..................................... 13 test mode select (tms) ......... .............. .............. ........ 13 test data-in (tdi) ....................................................... 13 test data-out (tdo ................................................... ) 13 performing a tap reset ............................................. 13 tap registers ............................................................. 13 instruction register .............................................. 13 bypass register ................................................... 13 boundary scan register ...................................... 13 identification (id) register.................................... 13 tap instruction set ..................................................... 13 idcode ............................................................... 14 sample z ........................................................... 14 sample/preload ............................................ 14 bypass............ .............. .............. .............. ......... 14 extest ............................................................... 14 extest output bus tristate .................... 14 reserved.............................................................. 14 tap electrical characteristics ........................................ 16 tap ac switching characteristics ................................. 17 tap timing and test conditions .................................... 17 power up sequence in ddr ii+ sram ............ ........... .... 20 power up sequence ................................................... 20 pll constraints........................................................... 20 maximum ratings............................................................. 21 operating range .............................................................. 21 neutron soft error immunity........................................... 21 electrical characteristics ................................................ 21 dc electrical characteristics...................................... 21 ac electrical characteristics ....................................... 22 capacitance ...................................................................... 23 thermal resistance ......................................................... 23 switching characteristics ............................................... 24 switching waveforms ... .............. .............. .............. ......... 25 read/write/deselect sequence ........................................... 25 ordering information ....................................................... 26 package diagram ............................................................. 26 sales, solutions, and legal information ........................ 27 worldwide sales and design support ......... ........... ..... 27 document history page................................................... 27 products ...................................................................... 27 [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 5 of 28 pin configuration the pin configuration for cy7c11461kv18, cy7c115 71kv18, cy7c11481kv18, and cy7c11501kv18 follows. [2] 165-ball fbga (13 x 15 x 1.4 mm) pinout cy7c11461kv18 (2m x 8) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/72m a r/w nws 1 k nc/144m ld a nc/36m cq b nc nc nc a nc/288m k nws 0 ancncdq3 c nc nc nc v ss aaav ss nc nc nc d nc nc nc v ss v ss v ss v ss v ss nc nc nc e nc nc dq4 v ddq v ss v ss v ss v ddq nc nc dq2 f nc nc nc v ddq v dd v ss v dd v ddq nc nc nc g nc nc dq5 v ddq v dd v ss v dd v ddq nc nc nc h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc nc v ddq v dd v ss v dd v ddq nc dq1 nc k nc nc nc v ddq v dd v ss v dd v ddq nc nc nc l nc dq6 nc v ddq v ss v ss v ss v ddq nc nc dq0 m nc nc nc v ss v ss v ss v ss v ss nc nc nc n nc nc nc v ss aaav ss nc nc nc p nc nc dq7 a a qvld a a nc nc nc r tdotckaaancaaatmstdi cy7c11571kv18 (2m x 9) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/72m a r/w nc k nc/144m ld a nc/36m cq b nc nc nc a nc/288m k bws 0 ancncdq3 c nc nc nc v ss aaav ss nc nc nc d nc nc nc v ss v ss v ss v ss v ss nc nc nc e nc nc dq4 v ddq v ss v ss v ss v ddq nc nc dq2 f nc nc nc v ddq v dd v ss v dd v ddq nc nc nc g nc nc dq5 v ddq v dd v ss v dd v ddq nc nc nc h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc nc v ddq v dd v ss v dd v ddq nc dq1 nc k nc nc nc v ddq v dd v ss v dd v ddq nc nc nc l nc dq6 nc v ddq v ss v ss v ss v ddq nc nc dq0 m nc nc nc v ss v ss v ss v ss v ss nc nc nc n nc nc nc v ss aaav ss nc nc nc p nc nc dq7 a a qvld a a nc nc dq8 r tdotckaaancaaatmstdi note 2. nc/36m, nc/72m, nc/144m, and nc/288m are not connected to the die and can be tied to any voltage level. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 6 of 28 cy7c11481kv18 (1m x 18) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/72m a r/w bws 1 k nc/144m ld a nc/36m cq b nc dq9 nc a nc/288m k bws 0 ancncdq8 c nc nc nc v ss ancav ss nc dq7 nc d nc nc dq10 v ss v ss v ss v ss v ss nc nc nc e nc nc dq11 v ddq v ss v ss v ss v ddq nc nc dq6 f nc dq12 nc v ddq v dd v ss v dd v ddq nc nc dq5 g nc nc dq13 v ddq v dd v ss v dd v ddq nc nc nc h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc nc v ddq v dd v ss v dd v ddq nc dq4 nc k nc nc dq14 v ddq v dd v ss v dd v ddq nc nc dq3 l nc dq15 nc v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc nc v ss v ss v ss v ss v ss nc dq1 nc n nc nc dq16 v ss aaav ss nc nc nc p nc nc dq17 a a qvld a a nc nc dq0 r tdotckaaancaaatmstdi cy7c11501kv18 (512k x 36) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/144m nc/36m r/w bws 2 k bws 1 ld a nc/72m cq b nc dq27 dq18 a bws 3 kbws 0 ancncdq8 c nc nc dq28 v ss ancav ss nc dq17 dq7 d nc dq29 dq19 v ss v ss v ss v ss v ss nc nc dq16 e nc nc dq20 v ddq v ss v ss v ss v ddq nc dq15 dq6 f nc dq30 dq21 v ddq v dd v ss v dd v ddq nc nc dq5 g nc dq31 dq22 v ddq v dd v ss v dd v ddq nc nc dq14 h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc dq32 v ddq v dd v ss v dd v ddq nc dq13 dq4 k nc nc dq23 v ddq v dd v ss v dd v ddq nc dq12 dq3 l nc dq33 dq24 v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc dq34 v ss v ss v ss v ss v ss nc dq11 dq1 n nc dq35 dq25 v ss aaav ss nc nc dq10 p nc nc dq26 a a qvld a a nc dq9 dq0 r tdotckaaancaaatmstdi pin configuration (continued) the pin configuration for cy7c11461kv18, cy7c115 71kv18, cy7c11481kv18, and cy7c11501kv18 follows. [2] 165-ball fbga (13 x 15 x 1.4 mm) pinout [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 7 of 28 table 2. pin definitions pin name i/o pin description dq [x:0] input output- synchronous data input output signals . inputs are sampled on the rising edge of k and k clocks during valid write operations. these pins drive out the requested data w hen the read operation is active. valid data is driven out on the rising edge of both the k and k clocks during read operations. w hen read access is deselected, q [x:0] are automatically tristated. cy7c11461kv18 ? dq [7:0] cy7c11571kv18 ? dq [8:0] cy7c11481kv18 ? dq [17:0] cy7c11501kv18 ? dq [35:0] ld input- synchronous synchronous load . sampled on the rising edge of the k clo ck. this input is brought low when a bus cycle sequence is defined. this definition includes address and read/write direction. all transactions operate on a burst of 2 data. ld must meet the setup and hold times around edge of k. nws 0 , nws 1 input- synchronous nibble write select 0, 1 ? active low (cy7c11461kv18 only) . sampled on the rising edge of the k and k clocks during write operations. used to select wh ich nibble is written into the device during the current portion of the write operations . nibbles not written remain unaltered. nws 0 controls d [3:0] and nws 1 controls d [7:4] . all the nibble write selects are sampled on the same edge as the data. deselecting a nibble write select ignores the corresponding nibble of data and it is not written into the device. bws 0 , bws 1 , bws 2 , bws 3 input- synchronous byte write select 0, 1, 2, and 3 ? active low . sampled on the rising edge of the k and k clocks during write operations. used to select which byte is written in to the device during the current portion of the write operations. bytes not written remain unaltered. cy7c11571kv18 ? bws 0 controls d [8:0] cy7c11481kv18 ? bws 0 controls d [8:0] and bws 1 controls d [17:9]. cy7c11501kv18 ? bws 0 controls d [8:0] , bws 1 controls d [17:9] , bws 2 controls d [26:18] and bws 3 controls d [35:27] . all the byte write selects are sampled on the same edge as the data. deselecting a byte write select ignores the corresponding byte of data and it is not written into the device. a input- synchronous address inputs . sampled on the rising edge of the k clock du ring active read and write operations. these address inputs are multiplexed for both read and writ e operations. internally, the device is organized as 2m x 8 (2 arrays each of 1m x 8) for cy7c11461kv18 and 2m x 9 (2 arrays each of 1m x9) for cy7c11571kv18, 1m x 18 (2 arrays each of 512k x 18) for cy7c11481kv18, and 512k x 36 (2 arrays each of 256k x 36) for cy7c11501kv18. r/w input- synchronous synchronous read or write input . when ld is low, this input designates the access type (read when r/w is high, write when r/w is low) for loaded address. r/w must meet the setup and hold times around edge of k. qvld valid output indicator valid output indicator . the q valid indicates valid output data. qvld is edge aligned with cq and cq . k input clock positive input clock input . the rising edge of k is used to capture synchronous inputs to the device and to drive out data through q [x:0] . all accesses are initiated on the rising edge of k. k input clock negative input clock input . k is used to capture synchronous data being presented to the device and to drive out data through q [x:0] . cq echo clock synchronous echo clock outputs . this is a free running clock and is synchronized to the input clock (k) of the ddr ii +. the timing for the ec ho clocks is shown in the switching characteristics on page 24. cq echo clock synchronous echo clock outputs . this is a free running clock and is synchronized to the input clock (k ) of the ddr ii+. the timing for the echo clocks is shown in the switching characteristics on page 24. zq input output impedance matching input . this input is used to tune the dev ice outputs to the system data bus impedance. cq, cq , and q [x:0] output impedance are set to 0.2 x rq, where rq is a resistor connected between zq and ground. alternatively, this pin can be connected directly to v ddq , which enables the minimum impedance mode. this pin cannot be connected directly to gnd or left unconnected. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 8 of 28 doff input pll turn off ? active low . connecting this pin to ground turns off the pll inside the device. the timing in the pll turned off operation differs from those listed in this data sheet. for normal operation, this pin can be connected to a pull up through a 10 k or less pull up resistor. the device behaves in ddr i mode when the pll is turned off. in this mode, the devi ce can be operated at a frequency of up to 167 mhz with ddr i timing. tdo output tdo for jtag . tck input tck pin for jtag . tdi input tdi pin for jtag . tms input tms pin for jtag . nc n/a not connected to the die . can be tied to any voltage level. nc/144m input not connected to the die . can be tied to any voltage level. nc/288m input not connected to the die . can be tied to any voltage level. v ref input- reference reference voltage input . static input used to set the reference level for hstl inputs, outputs, and ac measurement points. v dd power supply power supply inputs to the core of the device . v ss ground ground for the device . v ddq power supply power supply inputs for the outputs of the device . table 2. pin definitions (continued) pin name i/o pin description [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 9 of 28 functional overview the cy7c11461kv18, cy7c11571kv18, cy7c11481kv18, and cy7c11501kv18 are synchronous pipelined burst srams equipped with a ddr interface, which operates with a read latency of two cycles when doff pin is tied high. when doff pin is set low or connected to v ss , the device behaves in ddr i mode with a read latency of one clock cycle. accesses are initiated on the ri sing edge of the positive input clock (k). all synchronous input and output timing are referenced from the rising edge of the input clocks (k and k ). all synchronous data inputs (d [x:0] ) pass through input registers controlled by the rising edge of the input clocks (k and k ). all synchronous data outputs (q [x:0] ) pass through output registers controlled by the ri sing edge of the input clocks (k and k ). all synchronous control (r/w , ld , nws [x:0] , bws [x:0] ) inputs pass through input registers contro lled by the rising edge of the input clock (k). cy7c11481kv18 is described in the following sections. the same basic descriptions apply to cy7c11461kv18, cy7c11571kv18, and cy7c11501kv18. read operations the cy7c11481kv18 is organized internally as two arrays of 512k x 18. accesses are completed in a burst of two sequential 18-bit data words. read operations are initiated by asserting r/w high and ld low at the rising edge of the positive input clock (k). the address presented to the address inputs is stored in the read address register. following the next two k clock rise, the corresponding 18-bit word of data from this address location is driven onto the q [17:0] using k as the output timing reference. on the subsequent rising edge of k , the next 18-bit data word is driven onto the q [17:0] . the requested data is valid 0.45 ns from the rising edge of the input clock (k and k ). to maintain the internal logic, each read access must be allowed to complete. read accesses can be initiated on every rising edge of the positive input clock (k). when read access is deselected, the cy7c11481kv18 first completes the pending read transactions. synchronous internal circuitry automatically tristates th e output following the next rising edge of the positive input clock (k). this enables a transition between devices without the inserti on of wait states in a depth expanded memory. write operations write operations are initiated by asserting r/w low and ld low at the rising edge of the positive input clock (k). the address presented to address inputs is stored in the write address register. on the following k clock rise, the data presented to d [17:0] is latched and stored into the 18-bit write data register, provided bws [1:0] are both asserted active. on the subsequent rising edge of the negative input clock (k ) the infor- mation presented to d [17:0] is also stored into the write data register, provided bws [1:0] are both asserted active. the 36 bits of data are then written into th e memory array at the specified location. write accesses can be initiated on every rising edge of the positive input clock (k). doing so pipelines the data flow such that 18 bits of data can be tr ansferred into the device on every rising edge of the input clocks (k and k ). when the write access is deselected, the device ignores all inputs after the pending write operations have been completed. byte write operations byte write operations are suppor ted by the cy7c11481kv18. a write operation is initiated as described in the write operations section. the bytes that are written are determined by bws 0 and bws 1 , which are sampled with each set of 18-bit data words. asserting the appropriate byte wr ite select input during the data portion of a write latches the da ta being presented and writes it into the device. deasserting the byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. this feature can be used to simplify read, modify, or writ e operations to a byte write operation. ddr operation the cy7c11481kv18 enables high performance operation through high clock frequencies (achieved through pipelining) and ddr mode of operation. the cy 7c11481kv18 requires two no operation (nop) cycle during transi tion from a read to a write cycle. at higher frequencies, so me applications require third nop cycle to avoid contention. if a read occurs after a write cycl e, address and dat a for the write are stored in registers. the wr ite information is stored because the sram cannot perform the last word write to the array without conflicting with the read. the data stays in this register until the next write cycle occurs. on the fi rst write cycle after the read(s), the stored data from the earlier write is written into the sram array. this is called a posted write. if a read is performed on the same address on which a write is performed in the previous cycle, the sram reads out the most current data. the sram does this by bypassing the memory array and reading the data from the registers. depth expansion depth expansion requires replicating the ld control signal for each bank. all other control signals can be common between banks as appropriate. programmable impedance an external resistor, rq, must be connected between the zq pin on the sram and v ss to allow the sram to adjust its output driver impedance. the value of rq must be 5x the value of the intended line impedance driven by the sram. the allowable range of rq to guarantee impedance matching with a tolerance of 15% is between 175 and 350 , with v ddq =1.5v. the output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. echo clocks echo clocks are provided on the dd r ii+ to simplify data capture on high speed systems. two echo clocks are generated by the ddr ii+. cq is referenced with respect to k and cq is refer- enced with respect to k . these are free-ru nning clocks and are synchronized to the input clock of the ddr ii+. the timing for the echo clocks is shown in the switching characteristics on page 24. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 10 of 28 valid data indicator (qvld) qvld is provided on the ddr ii+ to simplify data capture on high speed systems. the qvld is generated by the ddr ii+ device along with data output. this signal is also edge aligned with the echo clock and follows the timing of any data pin. this signal is asserted half a cycle before valid data arrives. pll these chips use a pll that is designed to function between 120 mhz and the specified maximum clock frequency. during power up, when the doff is tied high, the pll is locked after 20 s of stable clock. the pll can also be reset by slowing or stopping the input clocks k and k for a minimum of 30 ns. however, it is not necessary to reset the pll to lock to the desired frequency. the pll automatically locks 20 s after a stable clock is presented. the pll may be disabled by applying ground to the doff pin. when the pll is turned off, the device behaves in ddr i mode (with one cycle latency and a longer access time). for more information, refer to the application note, pll consid- erations in qdrii/ddrii/qdrii+/ddrii+ . application example figure 1 shows two ddr ii+ used in an application. figure 1. application example dq a sram#2 ld cq/cq k zq k r/w bws bus master (cpu or asic) dq addresses ld r/w r = 250ohms source clk source clk echo clock1/echo clock1 echo clock2/echo clock2 r = 250ohms bws dq a sram#1 ld k zq cq/cq k r/w bws [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 11 of 28 table 3. truth table the truth table for the cy7c11461kv18, cy7c11571 kv18, cy7c11481kv18, and cy7c11501kv18 follows. [3, 4, 5, 6, 7, 8] operation k ld r/w dq dq write cycle: load address; wait one cycle; input write data on consecutive k and k rising edges. l-h l l d(a) at k(t + 1) d(a+1) at k (t + 1) read cycle: (2.0 cycle latency) load address; wait two cycles; read data on consecutive k and k rising edges. l-h l h q(a) at k(t + 2) q(a+1) at k (t + 2) nop: no operation l-h h x high-z high-z standby: clock stopped stopped x x previous state previous state table 4. write cycle descriptions the write cycle description table for cy 7c11461kv18 and cy7c 11481kv18 follows. [3, 9] bws 0 / nws 0 bws 1 / nws 1 k k comments l l l?h ? during the data portion of a write sequence : cy7c11461kv18 ? both nibbles (d [7:0] ) are written into the device. cy7c11481kv18 ? both bytes (d [17:0] ) are written into the device. l l ? l-h during the data portion of a write sequence : cy7c11461kv18 ? both nibbles (d [7:0] ) are written into the device. cy7c11481kv18 ? both bytes (d [17:0] ) are written into the device. l h l?h ? during the data portion of a write sequence : cy7c11461kv18 ? only the lower nibble (d [3:0] ) is written into the device, d [7:4] remains unaltered. cy7c11481kv18 ? only the lower byte (d [8:0] ) is written into the device, d [17:9] remains unaltered. l h ? l?h during the data portion of a write sequence : cy7c11461kv18 ? only the lower nibble (d [3:0] ) is written into the device, d [7:4] remains unaltered. cy7c11481kv18 ? only the lower byte (d [8:0] ) is written into the device, d [17:9] remains unaltered. h l l?h ? during the data portion of a write sequence : cy7c11461kv18 ? only the upper nibble (d [7:4] ) is written into the device, d [3:0] remains unaltered. cy7c11481kv18 ? only the upper byte (d [17:9] ) is written into the device, d [8:0] remains unaltered. h l ? l?h during the data portion of a write sequence : cy7c11461kv18 ? only the upper nibble (d [7:4] ) is written into the device, d [3:0] remains unaltered. cy7c11481kv18 ? only the upper byte (d [17:9] ) is written into the device, d [8:0] remains unaltered. h h l?h ? no data is written into the devices during this portion of a write operation. h h ? l?h no data is written into the devices during this portion of a write operation. notes 3. x = ?don?t care,? h = logic high, l = logic low, represents rising edge. 4. device powers up deselected with the outputs in a tristate condition. 5. ?a? represents address location latched by the devices when transaction was initiated. a + 1 represents the address sequence in the burst. 6. ?t? represents the cycle at which a read/w rite operation is started. t + 1 and t + 2 are the first and second clock cycles su cceeding the ?t? clock cycle. 7. data inputs are registered at k and k rising edges. data outputs are delivered on k and k rising edges as well. 8. ensure that when clock is stopped k = k and c = c = high. this is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 9. is based on a write cycle that was initiated in accordance with the write cycle descriptions table. nws 0 , nws 1 , bws 0 , bws 1 , bws 2 , and bws 3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 12 of 28 table 5. write cycle descriptions the write cycle description tabl e for cy7c11571kv18 follows. [3, 9] bws 0 k k comments l l?h ? during the data portion of a write sequence, the single byte (d [8:0] ) is written into the device. l ? l?h during the data portion of a write sequence, the single byte (d [8:0] ) is written into the device. h l?h ? no data is written into the device du ring this portion of a write operation. h ? l?h no data is written into the device du ring this portion of a write operation. table 6. write cycle descriptions the write cycle description tabl e for cy7c11501kv18 follows. [3, 9] bws 0 bws 1 bws 2 bws 3 k k comments lllll?h?during the data portion of a write se quence, all four bytes (d [35:0] ) are written into the device. llll?l?hduring the data portion of a write se quence, all four bytes (d [35:0] ) are written into the device. l h h h l?h ? during the data portion of a wr ite sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] remains unaltered. l h h h ? l?h during the data portion of a wr ite sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] remains unaltered. h l h h l?h ? during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] remains unaltered. h l h h ? l?h during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] remains unaltered. h h l h l?h ? during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] remains unaltered. h h l h ? l?h during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] remains unaltered. h h h l l?h ? during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] remains unaltered. h h h l ? l?h during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] remains unaltered. hhhhl?h?no data is written into the device during this portion of a write operation. hhhh?l?hno data is written into the device during this portion of a write operation. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 13 of 28 ieee 1149.1 serial boundary scan (jtag) these srams incorporate a serial boundary scan test access port (tap) in the fbga package. this part is fully compliant with ieee standard #1149.1-2001. the tap operates using jedec standard 1.8v i/o logic levels. disabling the jtag feature it is possible to operate t he sram without using the jtag feature. to disable the tap controller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are inter- nally pulled up and may be unconnected. they may alternatively be connected to v dd through a pull up resistor. tdo must be left unconnected. upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. test access port?test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tc k. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. this pin may be left unconnected if the tap is not used. the pin is pulled up inter- nally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information about loading the instruction register, see the tap controller state diagram on page 15. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most signific ant bit (msb) on any register. test data-out (tdo) the tdo output pin is used to serially clock data out from the registers. the output is acti ve, depending upon the current state of the tap state machine (see instruction codes on page 18). the output changes on the falling edge of tck. tdo is connected to the least signific ant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and can be performed while the sram is operating. at power up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected between the tdi and tdo pins to scan the data in and out of the sram test circuitry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serial ly loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo pins, as shown in tap controller block diagram on page 16. upon power up, the inst ruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state, as described in the previous section. when the tap controller is in the capture-ir state, the two least significant bits are loaded with a binary ?01? pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this enables shifting of data through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is conn ected to all of the input and output pins on the sram. several no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the boundary scan register is l oaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload, and sample z instructions can be used to capture the contents of the input and output ring. the boundary scan order on page 19 shows the order in which the bits are connected. each bi t corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id regi ster has a vendor code and other information described in identification register definitions on page 18. tap instruction set eight different instructions ar e possible with the three-bit instruction register. all combinations are listed in instruction codes on page 18. three of thes e instructions are listed as reserved and must not be used. the other five instructions are described in this section in detail. instructions are loaded into the tap controller during the shift-ir state when the instruction regist er is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through t he tdi and tdo pins. to execute the instruction after it is shif ted in, the tap controller must be moved into the update-ir state. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 14 of 28 idcode the idcode instruction loads a vendor-specific, 32-bit code into the instruction register. it also places the instruction register between the tdi and tdo pins and shifts the idcode out of the device when the tap controller enters the shift-dr state. the idcode instruction is loaded in to the instruction register at power up or whenever the tap controller is supplied a test-logic-reset state. sample z the sample z instruction connec ts the boundary scan register between the tdi and tdo pins when the tap controller is in a shift-dr state. the sample z command puts the output bus into a high-z state until the next command is supplied during the update ir state. sample/preload sample/preload is a 1149.1 mandatory instruction. when the sample/preload instructions are loaded into the instruction register and the tap controller is in the capture-dr state, a snapshot of data on the input and output pins is captured in the boundary scan register. the user must be aware that the tap controller clock can only operate at a frequency up to 20 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output undergoes a transition. the tap may then try to capture a signal while in transition (metastable state). this does not harm the device, but there is no guarantee as to the value that is captured. repeatable results may not be possible. to guarantee that the boundary scan register captures the correct value of a signal, the sram signal must be stabilized long enough to meet the tap cont roller's capture setup plus hold times (t cs and t ch ). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample/preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. after the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo pins. preload places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. the shifting of data for the sample and preload phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. bypass when the bypass instruction is loa ded in the inst ruction register and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo pins. the advantage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. extest the extest instruction drives the preloaded data out through the system output pi ns. this instruction also connects the boundary scan register for serial access between the tdi and tdo in the shift-dr controller state. extest output bus tristate ieee standard 1149.1 mandates t hat the tap controller be able to put the output bus into a tristate mode. the boundary scan register has a special bit located at bit #108. when this scan cell, called the ?e xtest output bus tristate,? is latched into the preload register during the update-dr state in the tap controller, it directly controls the state of the output (q-bus) pins, when the extest is entered as the current instruction. when high, it enables the output buffers to drive the output bus. when low, this bit places the output bus into a high-z condition. this bit can be set by entering the sample/preload or extest command, and then shifting the desired bit into that cell, during the shift-dr state. during update-dr, the value loaded into that shift-register cell latches into the preload register. when the extest instruction is entered, this bit directly controls the output q-bus pins. note that this bit is preset high to enable the output when the device is powered up, and also when the tap controller is in the test-logic-reset state. reserved these instructions are not implemented but are reserved for future use. do not use these instructions. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 15 of 28 the state diagram for the tap controller follows. [10] figure 2. tap controller state diagram test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 select ir-scan capture-ir shift-ir exit1-ir pause-ir exit2-ir update-ir note 10. the 0/1 next to each state represents the value at tms at the rising edge of tck. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 16 of 28 figure 3. tap controller block diagram tap electrical characteristics over the operating range [11, 12, 13] parameter description test conditions min max unit v oh1 output high voltage i oh = ? 2.0 ma 1.4 v v oh2 output high voltage i oh = ? 100 a1.6 v v ol1 output low voltage i ol = 2.0 ma 0.4 v v ol2 output low voltage i ol = 100 a0.2v v ih input high voltage 0.65v dd v dd + 0.3 v v il input low voltage ?0.3 0.35v dd v i x input and output load current gnd v i v dd ?5 5 a 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . 108 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms notes 11. these characteristics pertain to the tap inputs (tms, tck, tdi and tdo). parallel load levels are specified in the dc electrical characteristics table. 12. overshoot: v ih (ac) < v ddq + 0.3v (pulse width less than t cyc /2), undershoot: v il (ac) > ? 0.3v (pulse width less than t cyc /2). 13. all voltage referenced to ground. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 17 of 28 tap ac switching characteristics over the operating range [14, 15] parameter description min max unit t tcyc tck clock cycle time 50 ns t tf tck clock frequency 20 mhz t th tck clock high 20 ns t tl tck clock low 20 ns setup times t tmss tms setup to tck clock rise 5 ns t tdis tdi setup to tck clock rise 5 ns t cs capture setup to tck rise 5 ns hold times t tmsh tms hold after tck clock rise 5 ns t tdih tdi hold after clock rise 5 ns t ch capture hold after clock rise 5 ns output times t tdov tck clock low to tdo valid 10 ns t tdox tck clock low to tdo invalid 0 ns tap timing and test conditions figure 4 shows the tap timing and test conditions. [15] figure 4. tap timing and test conditions t tl t th (a) tdo c l = 20 pf z 0 = 50 gnd 0.9v 50 1.8v 0v all input pulses 0.9v test clock test mode select tck tms test data in tdi test data out t tcyc t tmsh t tmss t tdis t tdih t tdov t tdox tdo notes 14. t cs and t ch refer to the setup and hold time requirements of latching data from the boundary scan register. 15. test conditions are specified using t he load in tap ac test conditions. t r /t f = 1 ns. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 18 of 28 table 7. identification register definitions instruction field value description cy7c11461kv18 cy7c11571kv18 cy7c11481kv18 cy7c11501kv18 revision number (31:29) 000 000 000 000 version number. cypress device id (28:12) 11010111100000100 11010111100001100 11010111100010100 11010111100100100 defines the type of sram. cypress jedec id (11:1) 00000110100 00000110100 00000110100 00000110100 allows unique identification of sram vendor. id register presence (0) 1111indicates the presence of an id register. table 8. scan register sizes register name bit size instruction 3 bypass 1 id 32 boundary scan 109 table 9. instruction codes instruction code description extest 000 captures the input and output ring contents. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operation. sample z 010 captures the input and output contents. places the boundary scan register between tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use: this instruct ion is reserved for future use. sample/preload 100 captures the input and output ring c ontents. places the boundary scan register between tdi and tdo. does not affect the sram operation. reserved 101 do not use: this instruct ion is reserved for future use. reserved 110 do not use: this instruct ion is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 19 of 28 table 10. boundary scan order bit # bump id bit # bump id bit # bump id bit # bump id 0 6r 28 10g 56 6a 84 1j 16p299g575b852j 2 6n 30 11f 58 5a 86 3k 3 7p 31 11g 59 4a 87 3j 47n329f605c882k 5 7r 33 10f 61 4b 89 1k 6 8r 34 11e 62 3a 90 2l 7 8p 35 10e 63 2a 91 3l 8 9r 36 10d 64 1a 92 1m 9 11p 37 9e 65 2b 93 1l 10 10p 38 10c 66 3b 94 3n 11 10n 39 11d 67 1c 95 3m 12 9p 40 9c 68 1b 96 1n 13 10m 41 9d 69 3d 97 2m 14 11n 42 11b 70 3c 98 3p 15 9m 43 11c 71 1d 99 2n 16 9n 44 9b 72 2c 100 2p 17 11l 45 10b 73 3e 101 1p 18 11m 46 11a 74 2d 102 3r 19 9l 47 10a 75 2e 103 4r 20 10l 48 9a 76 1e 104 4p 21 11k 49 8b 77 2f 105 5p 22 10k 50 7c 78 3f 106 5n 23 9j 51 6c 79 1g 107 5r 24 9k 52 8a 80 1f 108 internal 25 10j 53 7a 81 3g 26 11j 54 7b 82 2g 27 11h 55 6b 83 1h [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 20 of 28 power up sequence in ddr ii+ sram ddr ii+ srams must be powered up and initialized in a predefined manner to prevent undefined operations. power up sequence apply power and drive doff either high or low (all other inputs can be high or low). ? apply v dd before v ddq . ? apply v ddq before v ref or at the same time as v ref . ? drive doff high. provide stable doff (high), power and clock (k, k ) for 20 s to lock the pll. pll constraints pll uses k clock as its synchronizing input. the input must have low phase jitter, which is specified as t kc var . the pll functions at frequencies down to 120 mhz. if the input clock is unstable and the pll is enabled, then the pll may lock onto an incorrect frequency, causing unstable sram behavior. to avoid this, provide 20 s of stable clock to relock to the desired clock frequency. figure 5. power up waveforms > 20 p s stable clock start normal operation doff stabl e (< +/- 0.1v dc per 50ns ) fix high (or tie to v ddq ) k k ddq dd v v / ddq dd v v / clock start ( clock starts after stable ) ddq dd v v / ~ ~ ~ ~ unstable clock [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 21 of 28 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature ................................. ?65c to +150c ambient temperature with power applied.. ?55c to +125c supply voltage on v dd relative to gnd ... .....?0.5v to +2.9v supply voltage on v ddq relative to gnd.......?0.5v to +v dd dc applied to outputs in high-z ......... ?0.5v to v ddq + 0.3v dc input voltage [12] ............................... ?0.5v to v dd + 0.3v current into outputs (low)....... .................................. 20 ma static discharge voltage (mil-std-883, m 3015).... >2001v latch up current..................................................... >200 ma electrical characteristics operating range range ambient temperature (t a ) v dd [16] v ddq [16] commercial 0c to +70c 1.8 0.1v 1.4v to v dd industrial ?40c to +85c neutron soft error immunity parameter description test conditions typ max* unit lsbu logical single-bit upsets 25c 197 216 fit/ mb lmbu logical multi-bit upsets 25c 0 0.01 fit/ mb sel single event latch up 85c 0 0.1 fit/ dev * no lmbu or sel events occurred during testing ; this column represents a statistical 2 , 95% confidence limit calculation. for more details refer to appli- cation note an 54908 ?accelerated neutron ser testing and calculation of terrestrial failure rates? dc electrical characteristics over the operating range [13] parameter description test conditions min typ max unit v dd power supply voltage 1.7 1.8 1.9 v v ddq i/o supply voltage 1.4 1.5 v dd v v oh output high voltage note 17 v ddq /2 ? 0.12 v ddq /2 + 0.12 v v ol output low voltage note 18 v ddq /2 ? 0.12 v ddq /2 + 0.12 v v oh(low) output high voltage i oh = ? 0.1 ma, nominal impedance v ddq ? 0.2 v ddq v v ol(low) output low voltage i ol = 0.1 ma, nominal impedance v ss 0.2 v v ih input high voltage v ref + 0.1 v ddq + 0.15 v v il input low voltage ?0.15 v ref ? 0.1 v i x input leakage current gnd v i v ddq ? 2 2 a i oz output leakage current gnd v i v ddq, output disabled ? 2 2 a v ref input reference voltage [19] typical value = 0.75v 0.68 0.75 0.95 v notes 16. power up: assumes a linear ramp from 0v to v dd (min) within 200 ms. during this time v ih < v dd and v ddq < v dd . 17. outputs are impedance controlled. i oh = ?(v ddq /2)/(rq/5) for values of 175 < rq < 350 . 18. outputs are impedance controlled. i ol = (v ddq /2)/(rq/5) for values of 175 < rq < 350 . 19. v ref (min) = 0.68v or 0.46v ddq , whichever is larger, v ref (max) = 0.95v or 0.54v ddq , whichever is smaller. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 22 of 28 i dd [20] v dd operating supply v dd = max, i out = 0 ma, f = f max = 1/t cyc 450 mhz (x8) 630 ma (x9) 630 (x18) 650 (x36) 820 400 mhz (x8) 580 ma (x9) 580 (x18) 590 (x36) 750 375 mhz (x8) 550 ma (x9) 550 (x18) 570 (x36) 710 333 mhz (x8) 510 ma (x9) 510 (x18) 520 (x36) 640 i sb1 automatic power down current max v dd , both ports deselected, v in v ih or v in v il f = f max = 1/t cyc , inputs static 450 mhz (x8) 340 ma (x9) 340 (x18) 340 (x36) 340 400 mhz (x8) 320 ma (x9) 320 (x18) 320 (x36) 320 375 mhz (x8) 310 ma (x9) 310 (x18) 310 (x36) 310 333 mhz (x8) 290 ma (x9) 290 (x18) 290 (x36) 290 ac electrical characteristics over the operating range [12] parameter description test conditions min typ max unit v ih input high voltage v ref + 0.2 ? v ddq + 0.24 v v il input low voltage ?0.24 ? v ref ? 0.2 v dc electrical characteristics (continued) over the operating range [13] parameter description test conditions min typ max unit note 20. the operation current is calculated with 50% read cycle and 50% write cycle. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 23 of 28 capacitance tested initially and after any design or process change that may affect these parameters. parameter description test conditions max unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = 1.8v, v ddq = 1.5v 4 pf c o output capacitance 4pf thermal resistance tested initially and after any design or process change that may affect these parameters. parameter description test conditions 165 fbga package unit ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with eia/jesd51. 13.7 c/w jc thermal resistance (junction to case) 3.73 c/w figure 6. ac test loads and waveforms 1.25v 0.25v r = 50 5pf including jig and scope all input pulses device r l = 50 z 0 = 50 v ref = 0.75v v ref = 0.75v [21] 0.75v under te s t 0.75v device under te s t output 0.75v v ref v ref output zq zq (a) slew rate = 2 v/ns rq = 250 (b) rq = 250 21. unless otherwise noted, test conditions assume signal tran sition time of 2v/ns, timing reference levels of 0.75v, v ref = 0.75v, rq = 250 , v ddq = 1.5v, input pulse levels of 0.25v to 1.25v, and output loading of the specified i ol /i oh and load capacitance shown in (a) of ac test loads and waveforms . [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 24 of 28 switching characteristics over the operating range [21, 22] cypress parameter consortium parameter description 450 mhz 400 mhz 375 mhz 333 mhz unit min max min max min max min max t power v dd (typical) to the first access [23] 1?1?1?1?ms t cyc t khkh k clock cycle time 2.20 8.4 2.50 8.4 2.66 8.4 3.0 8.4 ns t kh t khkl input clock (k/k ) high 0.4 ? 0.4 ? 0.4 ? 0.4 ? ns t kl t klkh input clock (k/k ) low 0.4 ? 0.4 ? 0.4 ? 0.4 ? ns t khk h t khk h k clock rise to k clock rise (rising edge to rising edge) 0.94 ? 1.06 ? 1.13 ? 1.28 ? ns setup times t sa t avkh address setup to k clock rise 0.275 ? 0.4 ? 0.4 ? 0.4 ? ns t sc t ivkh control setup to k clock rise (ld , r/w ) 0.275 ? 0.4 ? 0.4 ? 0.4 ? ns t scddr t ivkh double data rate control setup to clock (k/k ) rise (bws 0 , bws 1 , bws 2 , bws 3 ) 0.22 ? 0.28 ? 0.28 ? 0.28 ? ns t sd t dvkh d [x:0] setup to clock (k/k ) rise 0.22?0.28?0.28?0.28? ns hold times t ha t khax address hold after k clock rise 0.275 ? 0.4 ? 0.4 ? 0.4 ? ns t hc t khix control hold after k clock rise (ld , r/w ) 0.275 ? 0.4 ? 0.4 ? 0.4 ? ns t hcddr t khix double data rate control hold after clock (k/k ) rise (bws 0 , bws 1 , bws 2 , bws 3 ) 0.22 ? 0.28 ? 0.28 ? 0.28 ? ns t hd t khdx d [x:0] hold after clock (k/k ) rise 0.22?0.28?0.28?0.28? ns output times t co t chqv k/k clock rise to data valid ?0.45?0.45?0.45?0.45ns t doh t chqx data output hold after output k/k clock rise (active to active) ?0.45 ? ?0.45 ? ?0.45 ? ?0.45 ? ns t ccqo t chcqv k/k clock rise to echo clock valid ? 0.45 ? 0.45 ? 0.45 ? 0.45 ns t cqoh t chcqx echo clock hold after k/k clock rise ?0.45 ? ?0.45 ? ?0.45 ? ?0.45 ? ns t cqd t cqhqv echo clock high to data valid ? 0.15 ? 0.20 ? 0.20 ? 0.20 ns t cqdoh t cqhqx echo clock high to data invalid ?0.15 ? ?0.20 ? ?0.20 ? ?0.20 ? ns t cqh t cqhcql output clock (cq/cq ) high [24] 0.85 ? 1.00 ? 1.08 ? 1.25 ? ns t cqhcq h t cqhcq h cq clock rise to cq clock rise (rising edge to rising edge) [24] 0.85 ? 1.00 ? 1.08 ? 1.25 ? ns t chz t chqz clock (k/k ) rise to high-z (active to high-z) [25, 26] ? 0.45 ? 0.45 ? 0.45 ? 0.45 ns t clz t chqx1 clock (k/k ) rise to low-z [25, 26] ?0.45 ? ?0.45 ? ?0.45 ? ?0.45 ? ns t qvld t cqhqvld echo clock high to qvld valid [27] ?0.15 0.15 ?0.20 0.20 ?0.20 0.20 ?0.20 0.20 ns pll timing t kc var t kc var clock phase jitter ? 0.15 ? 0.20 ? 0.20 ? 0.20 ns t kc lock t kc lock pll lock time (k) 20?20?20?20? s t kc reset t kc reset k static to pll reset [28] 30?30?30?30? ns notes 22. when a part with a maximum frequency above 333 mhz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 23. this part has an internal voltage regulator; t power is the time that the power is supplied above v dd min initially before a read or write operation can be initiated. 24. these parameters are extrapolated from the input timing parameters (t cyc /2 - 250 ps, where 250 ps is the internal jitter). these parameters are only guaranteed by design and are not tested in production. 25. t chz , t clz are specified with a load capacitance of 5 pf as in (b) of ac test loads and waveforms . transition is measured 100 mv from steady-state voltage. 26. at any voltage and temperature t chz is less than t clz and t chz less than t co . 27. t qvld specification is applicable for both rising and falling edges of qvld signal. 28. hold to >v ih or cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 25 of 28 switching waveforms read/write/deselect sequence [29, 30, 31, 32] figure 7. waveform for 2.0 cycle read latency dont care undefined 1 2 3 4 5 6 7 8 9 10 read read read nop write write t nop 11 k k ld r/w a t kh t kl t cyc t hc t sa t ha sc a0 a1 a2 a3 a4 cq cq qvld qvld t nop t qvld t t ccqo t cqoh t t cqoh qvld t nop dq khkh 12 (read latency = 2.0 cycles) nop nop ccqo t sd hd t sd t hd t clz t chz d20 d21 d30 d31 t cqdoh q00 q11 q01 q10 t doh t co q40 q41 t cqd t t t cqh cqhcqh notes 29. q00 refers to output from address a0. q01 refers to output from the next internal burst address following a0, that is, a0 + 1. 30. outputs are disabled (high-z) one clock cycle after a nop. 31. the third nop cycle between read to write transition is not necessary for correct device operation when read latency = 2.0 c ycles; however at high frequency operation, it is required to avoid bus contention. 32. in this example, if address a4 = a3, then data q40 = d30 and q41 = d31. write data is forwarded immediately as read results. this note applies to the whole diagram. [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 26 of 28 ordering information the following table contains only the parts that are currently av ailable. if you do not see what you are looking for, contact y our local sales representative. for more information, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products cypress maintains a worldwide network of offi ces, solution centers, manufacturer?s r epresentatives and distributors. to find th e office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. table 11. ordering information speed (mhz) ordering code package diagram package type operating range 400 CY7C11481KV18-400BZC 51-85180 165-ball fine pitc h ball grid array (13 x 15 x 1.4 mm) commercial cy7c11481kv18-400bzxc 165-ball fine pitch ba ll grid array (13 x 15 x 1.4 mm) pb-free cy7c11501kv18-400bzxc cy7c11501kv18-400bzxi 51-85180 165-ball fine pitch ba ll grid array (13 x 15 x 1.4 mm) pb-free industrial package diagram figure 8. 165-ball fbga (13 x 15 x 1.4 mm), 51-85180 a 1 pin 1 corner 15.000.10 13.000.10 7.00 1.00 ?0.50 (165x) ?0.25 m c a b ?0.08 m c b a 0.15(4x) seating plane 0.530.05 0.25 c 0.15 c pin 1 corner top view bottom view 2 3 4 5 6 7 8 9 10 10.00 14.00 b c d e f g h j k l m n 11 11 10 9 8 67 5 4 3 2 1 p r p r k m n l j h g f e d c b a a 15.000.10 13.000.10 b c 1.00 5.00 0.36 -0.06 +0.14 1.40 max. solder pad type : non-solder mask defined (nsmd) notes : package weight : 0.475g jedec reference : mo-216 / issue e package code : bb0ac 51-85180-*c [+] feedback [+] feedback
cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 document number: 001-53198 rev. *e page 27 of 28 document history page document title: cy7c11461kv18/cy7c11571kv18/cy7c11481k v18/cy7c11501kv18, 18-mbit ddr ii+ sram 2-word burst architecture (2.0 cycle read latency) document number: 001-53198 rev. ecn no. orig of change submission date description of change ** 2702744 vkn/pyrs 05/06/09 new datasheet *a 2747707 vkn/aesa 08/03/2009 convert ed from preliminary to final for 450mhz speed, changed t co , t ccqo , t chz from 370ps to 450ps and t doh , t cqoh , t clz from -370ps to -450ps included soft error immunity data modified ordering information table by including parts that are available and modified the disclaimer for the ordering information *b 2761928 aju 09/10/2009 post to external web *c 2767155 vkn 09/23/2009 changed input capacitance (c in ) from 2 pf to 4 pf changed output capacitance (c o ) from 3 pf to 4 pf modified ordering code disclaimer *d 2813347 vkn/aesa 11/23/2009 included cy7c11501kv18- 400bzxc & cy7c11501kv18-400bzxi part in the ordering information table *e 2855911 vkn 01/18/2010 included ?cy7c11481kv18-400bzx c? part in the ordering information table updated package outline diagram [+] feedback [+] feedback
document number: 001-53198 rev. *e revised january 18, 2010 page 28 of 28 qdr rams and quad data rate rams comprise a new family of products developed by cypress, idt, nec, renesas, and samsung. all pr oduct and company names mentioned in this document are the trademarks of their respective holders. cy7c11461kv18, cy7c11571kv18 cy7c11481kv18, cy7c11501kv18 ? cypress semiconductor corporation, 2009-2010. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreemen t with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support syst ems where a malfunction or failure may reas onably be expected to result in significa nt injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and international treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or impl ied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress re serves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representative s, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory optical & image sensing cypress.com/go/image psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 5 [+] feedback [+] feedback

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